Simulation of Low Energy Electron-Enhanced Etching of GaN

Weiqiao Deng, Richard Muller, Lu Sun, William A. Goddard III

Materials and Process Simulations Center, Beckman Institute, Division of Chemistry and Chemical Engineering, California Institute of Technology

Pat H. Gillis

Department of Chemistry and Biochemistry, University of California, Los Angeles



The simulation of Low Energy Electron-Enhanced Etching (LE4) of GaN will be studied by molecular dynamics. The processing is supposed to be simulated in three steps:

First is to simulate the distribution of electron beam. Second is to simulate the collision between electron and surface of GaN. Third is to simulate the reaction between vibrational or electronic excited GaN and the plasma molecule absorbed on the surface. This simulation is expected to explain the mechanism of LE4, which is unclear currently.