"Design of a Nanomechanical Fluid Control Valve Based on Functionalized Silicon Cantilevers:
Coupling Molecular Mechanics and Classical
Engineering Design"
Santiago
Solares(*), Mario Blanco, and William A. Goddard III,
Materials
and Process Simulation Center
California
Institute of Technology,
Mail Code
210-41
Pasadena,
CA 91125
(*)
Author to whom correspondence should be addressed
Process engineering design relies on a host of mechanical
devices that enable transport phenomena to take place under controlled
conditions. These devices include
pipes, valves, pumps, chemical reactors, heat exchangers, packed columns,
etc. Mass, energy, and momentum transfer
will also be essential phenomena in nano-process engineering, particularly at
the interface between micro and nanodevices.
Control valves are one of the most fundamental components. In this paper we explore the design of a
silicon cantilever valve for fluid transport control at the molecular level
(32.5-55 nm in length). We utilize
design elements that can be synthesized with existing or emerging chemical
methods. Thus, the valve is constructed
with functionalized silicon surfaces, single-wall carbon nanotubes, and organic
monolayers. While Molecular Mechanics
design limitations were overcome with help from classical engineering
approximations, non-linear effects, such as nanotube crimping (for an in-line
valve design), are accounted for through full-physics atomistic simulations.
Optimal design geometries and operating deflection ranges have been estimated
for a device containing over 75,000 atoms.
Introduction:
In the last few years there have been significant advances in
the characterization of the mechanical properties of carbon nanotubes, silicon
and silicon oxide surfaces and cantilevers [1-4]. Properties such as resonance frequency and
bending modulus have been extensively researched for both cantilevers and
carbon nanotubes [1, 5-8].
A great deal of work has also been done on the mechanical properties of
functionalized cantilevers, generally covered on one face with a metallic layer
of variable thickness and composition, polymer coatings, or monolayers of
self-assembled or chemically bonded molecules of various types [8-16]. Functionalized cantilevers exhibit
deflection due to differences in surface stress between functionalized and
non-functionalized opposite faces. The
surface stress on the functionalized face is a function of the environment, and
the changes induced by the environment are generally reversible. Since it is possible to control the
environment, it is also possible to generate controlled deflection of the cantilever.
This presents significant opportunities to utilize functionalized cantilevers
as reliable and reversible actuators in nanomechanical devices such as valves,
pumps, switches, etc.
In this paper we present the design of a fluid control
valve that utilizes a silicon cantilever, functionalized with a covalently
bonded monolayer of acrylic acid, as the actuator that opens and closes flow
through a fluid conduit, a single-wall carbon nanotube (SWCNT). The on/off position of the valve is
controlled by pH changes in the surrounding environment. Changes in pH affect the charge of the
organic acid groups bonded to the surface of the cantilever. The electrostatic energy of these acid
groups on the functionalized surface of the cantilever causes a compressive
stress that deflects it to the closed position [10]. The device assembly and valve components are
feasible with today's laboratory synthesis capabilities (SWCNT synthesis
methods, silicon etching techniques and covalent monolayer assembly).
Classical engineering design approximations can be utilized
to lower the computational costs of current molecular modeling methodologies.
As devices become larger, their design becomes computationally more expensive
and in some cases impractical (an N2 problem). In the present case, for example, the system
has in excess of 75,000 atoms and is over 30 nm long. Since the performance of the system depends on the electrostatic
interaction of all the functional molecules on the surface of the device, it is
necessary to include in the calculations all the electrostatic interactions of
all charged particles in order to have an accurate model. Efficient electrostatic lattice sum methods,
such as Ewald and Particle-Mesh Ewald, cannot be employed without introducing
artifacts due to imposition of periodic boundary conditions (the device under
consideration is not a periodic system), thus we are left with a direct
electrostatic sum in real space. In
most standard molecular simulation packages this would require including all
non-bonded interactions within a radius of 35 nm. Since the number of
non-bonded interactions scales as N2, this makes the calculations
unnecessarily lengthy assuming that the computing system has enough memory to
store such a large energy expression.
Furthermore, the use of cutoffs or splines in the calculation of the
electrostatic energy can underestimate the correct values by factors of one
order of magnitude for the monolayer dimensions considered here.
A second computational issue is the statistical nature of
the evaluation of the convergence criteria used in a molecular mechanics
simulation. Average forces or strain
energies don't necessarily represent the equilibrium state of the system, local
or global. Due to the large number of
atoms, large residual forces and stresses may be present in a small section of
the system, while the average force and strain are quite small. A criteria based on average forces/strains
may leave the device in a non-equilibrium state.
These difficulties will be overcome with more powerful
computer systems and more flexible molecular simulations software packages, but
this requires time, human and financial resources, and breakthroughs in
computer systems. A more practical
approach is to perform a semi-continuum characterization of the system, whereby
each component of a particular device is individually characterized using
molecular simulations prior to a classical analysis of the entire device. This characterization includes the
determination of the classical engineering parameters needed for the continuum
analysis, such as natural vibrational frequencies, elasticity moduli, points of
mechanical failure, etc., at the length scale under consideration. Once these parameters are available, the
continuum analysis of the assembled device becomes a simple exercise. The latter approach is presented in this
paper.
It must also be noted that in order to have a complete ab
initio description of the device presented here, there are several fundamental
issues that still need to be answered.
Two of them are the molecular transport phenomena through SWCNT's and
the solvation properties of acid monolayers on deflected cantilevers. Although no attempt is made to resolve these
issues in this paper, the engineering method presented here remains a useful
design tool for the future inclusion of these effects. This is because it is
generally possible to find smooth-varying mathematical approximations of those
effects, over finite length and time scales, which can then be incorporated
into the engineering continuum models.
Atomistic simulations provide the range over which these smooth
approximations are valid as well as identify the regions where transitions take
place. A prime example of a complex
system which can be classically approximated with segment-wise smoothly varying
functions is the bending of a SWCNT, which exhibits buckling phenomena (see figure
9).
Design Concept and Potential Applications:
The present design (see figure 1) consists of a
silicon block and cantilever, which is functionalized on its top surface to
provide a layer where electrostatic repulsion can take place. We initially chose to functionalize the
cantilever with a covalently bonded organic monolayer made of acrylic acid,
although other possibilities are discussed below (such as the electrostatic
deflection of charged metallic mono- or bilayers on the surface of the
cantilever).
The organic monolayer can be assembled on the surface
through hydrogenation of the cantilever, followed by thermal reaction of the
hydrogenated surface with the olefin of the acid. The silicon block can be
etched to its final dimensions, and then its lower part can be perforated so
that a SWCNT can be inserted through the perforation. The SWCNT is used as the fluid transport conduit, which may be
connected to other devices as part of a larger system. The choice of a covalently bonded monolayer
ensures that the structure of the device will be stable and will not be subject
to undesirable changes by the solution environment.

Figure
1: Side view of the nanomechanical valve,
showing the silicon block construction, the acrylic acid monolayer on the top
surface and a 17,17 SWCNT inserted through the silicon block. The model shown contains approximately
76,500 atoms and its main body (silicon block) is 35 nm long.
Depending on whether the discharge end of the valve is
fixed or movable, two designs are considered here (see figure 2): (a) an
"in-line" design, where the discharge end of the SWCNT is connected to another
device and therefore it is not allowed to move. In this case, it is required that there be a surface on which the
SWCNT rests, so that the action of the cantilever "crimps" the SWCNT against
that surface in order to interrupt the flow through it, and (b) a "free-end"
design, where the position of the discharge end of the SWCNT is not
constrained, and the action of the cantilever deflects the SWCNT past the point
of buckling, thus interrupting the flow.

Figure
2: Two types of valve design according to the
mobility of the discharge end of the nanotube: "in-line" and "free-end"
designs.
The device shown in figure 1 is designed to work in
an aqueous environment (although this is not the case for systems relying on
the deflection of charged metallic layers).
If the pH of the surrounding environment is low, most of the molecules
on the monolayer will be protonated and as a result there will not be a
significant net charge on the monolayer.
There may be a slight stress on the surface due to the van der Waals interactions
between monolayer molecules, which may very slightly deflect the cantilever up
or down, but this will have only a negligible effect on the flow through the
SWCNT. If the pH of the surrounding
environment is high, a certain amount of molecules on the monolayer will
deprotonate, resulting in a net negative charge on the surface of the
cantilever. The excess charge will
cause a compressive stress that will deflect the cantilever downward [10],
thus exerting pressure on the SWCNT and interrupting the fluid flow. Since changes in pH are reversible (by
addition of acids and bases) and the device structure is inert to the
environment, the process is repeatable.
It is also worth noting that the section of the monolayer
assembled behind the cantilever, on the non-deflecting part of the valve (main
silicon block), is a necessary design element in order to force the cantilever
to deflect downwards. If the monolayer
stopped behind the base, the cantilever would be relatively free to curl in an
inverted "U" shape rendering inadequate to interrupt the flow through the
SWCNT. Basically, the section behind
the cantilever overcomes most of the upward torque around the base, which comes
from the force exerted on its tip by the SWCNT.
Short term, our valve design has multiple potential uses in
nano-fluidics, including fields such as medicine, biology, environmental
engineering, micro- or nano-engines, ink-jet printing, and any other
application where fluid transport is desired at the nanoscale level. In addition, this device can be set up for
self-regulated dosing of compounds (see figure 3). This can be achieved
by connecting the device to a reservoir containing the reactant, so that after
flowing out through the SWCNT, the reactant changes the pH of the surrounding
environment, thus causing the valve to close until the pH has returned to the
level that allows it to open again. The
process could continue until the reservoir is completely empty.

Figure
3: Self-regulated dosing of acid and basic
compounds (e.g. drugs)
Long-term we envisioned the control valve presented here as
a key element at the interface between micro and nano-scale devices. For example, fluid transport between
micro-storage tanks, for reactants and products, and position controlled nanosynthesis
devices will require control mechanisms such as the valve designed here to
regulate the throughputs of fluid species (see Figure 4).

Figure
4: Conceptual drawing of a molecular
manufacturing system showing the controlled delivery of reactants from a
microstorage unit to the nanoassembly unit through a SWCNT. It is assumed that the reactant is in the
fluid state. The flow is controlled by
the device described in this paper. The
size of this device (~22.5 – 45 nm) makes it a suitable interface between micro
and nanosystems. The drawing, not drawn to scale, also shows
the order of magnitude of the dimensions of each component.
Design Methodology:
Design Overview:
Classical engineering design makes use of bulk material
properties, such as Young's modulus, heat capacity, heat conductivity,
diffusion coefficients, etc. These properties
have more fundamental energy and force components at the atomistic level, such
as electrostatic and van der Waals interactions, as well as covalent
intramolecular interactions. These
properties are embedded in classical force fields, mathematical expressions for
the energy and forces within a molecular system given the charges and positions
of all atoms. In turn, the parameters
in the force field depend on the nuclear and electronic structure of the molecules,
which can be estimated using Quantum Mechanics [17,18].
In order to have an accurate description of a nano-device
it is desirable to include as much molecular detail as possible in the analysis
of its behavior. However, for the
reasons described above it is not practical to conduct all design steps at the
molecular level. Hence, we present a
hybrid methodology that combines molecular simulations with classical
engineering. The molecular simulations
provide the elastic and/or electrostatic properties of each component of the
system considered individually, estimated from the force field, while the
classical analysis provides the behavior of the assembled system based on those
properties. In summary the steps
followed in the present design are the following:
Molecular Simulation Steps:
Classical Engineering Steps:
Design Details:
Molecular Simulation Steps:

Figure
5: Analysis of monolayer cohesive energy
(normalized to the number of adsorbed molecules) for three different
geometrical arrangements of four organic acids (acrylic, hexanoic, dodecanoic
and eicosanoic) on a Si(111) surface at 50% coverage. The results show increasing monolayer stability (more negative
cohesive energy values) with increasing carbon chain length. As shown on the graph, the linear
arrangement was more stable at shorter chain lengths, while the hexagonal
arrangement was more stable for longer chain lengths. The three geometrical arrangements considered for the Si(111)
surface are shown in figure 6.

Figure
6: Three
geometrical arrangements considered in the determination of monolayer cohesive
energy on the Si(111) surface at 50% coverage.

Figure
7: 15x3x2 nm silicon cantilever (LxWxH). The top surface is the Si(100). The strain energy at different levels of
deflection was obtained by fixing the atoms on one end of the cantilever,
displacing those on the right end to their final position and allowing the
system to relax. Figure 8 shows
the strain energy curve for this system as a function of curvature (1/Rc, where
Rc is the radius of curvature).

Figure
8: Strain energy as a function of curvature
(1/Rc) for the cantilever shown in figure 7. This curve has been corrected to represent a system where the plane
of zero deformation is at the bottom face of the cantilever. The average Young's modulus for silicon
calculated from the above strain energy curve is 76.7 GPa versus the
experimental bulk value of 47 GPa.

Figure
9: 17,17 carbon nanotube at a curvature of
0.0031/Ang (beyond the point of buckling).

Figure 10: Strain energy as a function of curvature (1/Rc) for the nanotube shown in figure 9. The graph shows two distinct strain energy functions below and above the point of buckling. The average calculated value of the Young's modulus was 1719 Gpa. The experimental value from vibrational frequencies measurement is 1250 Gpa [10] and the experimental value from tensile molecular simulations is 640 – 673 GPa [1].

Figure
11: Partial view of the model used to construct
the crimping energy curve, showing the tip of the cantilever, part of the 17,17
nanotube and part of the Si(100) surface on which the system rests.

Figure
12: Strain energy as a function of the internal
opening of the carbon nanotube for the model shown in figure 11. Note the sharp change in the slope of the
curve at approximately 1.81 Angstroms of internal opening. The amount of energy required to crimp the
nanotube below this value increases exponentially according to the force field
short-range van der Waals functions [17]. For the classical analysis of the present device it was assumed
that no fluid flows through the nanotube below this value. As shown in figure 14, this is a
reasonable assumption based on the energy required for a molecule to flow from
one side of the crimped section to the other.

Figure
13: Strain
energy (due to crimping of the nanotube) Vs. curvature of the cantilever for
the model shown in figure 11.
The y-axis values used to construct this graph correspond to the energy
values of the graph in figure 12 (crimping energy as a function of
internal opening). The x-axis value for
each point corresponds to the curvature that the cantilever would have to have
in order to crimp the nanotube up to that point. The curvature of the
cantilever was determined through geometrical calculations based on its
displacement towards the nanotube and assuming that it has a uniform curvature
throughout its length.

Figure
14: Incremental energy of the "in-line" valve
system due to the presence of a single molecule moving through the
crimped section (throat) of the 17,17 nanotube when the minimum opening (skin
to skin) is 1.81 Angstrom. The results
show that the incremental energy of the system due to the presence of a single
molecule at the valve throat is above the total crimping energy for the system
(see figures 12 and 13), hence it is reasonable to consider this
as the closed position of the valve.
Note: the zero energy of the graph corresponds to the lowest energy of
each molecule during the trajectory analyzed.

Figure
15: Electrostatic energy as a function of
cantilever curvature for a 22.5x6x2 (LxWxH) cantilever completely deprotonated
without including solvent effects.
The electrostatic energy calculations in this analysis,
include all the net charges on the surface.
No cutoffs or spline functions were used for the reasons discussed
above.
Classical Engineering Steps:



Figure
16: Left
and center, nanotube junctions considered for the initial design. Right, chosen method of assembly (front view),
whereby the silicon block is perforated and the nanotube is inserted through
the opening. Note that the perforation
does not need to be as small as shown on this illustration. In fact, it may be much larger than the tube
to facilitate the assembly process, as long as the relative position of the
silicon assembly and the tube are fixed in the final design.

Figure
17: Performance chart of a cantilever valve,
showing the partial energy contributions and the total energy of a system with
a 15x3x2 nm cantilever (LxWxH). This
corresponds to a "free-end" design with a 17,17 SWCNT. It is assumed that the available electrostatic
energy is only 10% of the maximum (i.e. each carboxylic acid group has a charge
of approximately 0.32 e). As shown, the
system is not able to reach the point of buckling of the SWCNT.

Figure
18: Performance chart of a cantilever valve,
showing the partial energy contributions and the total energy of a system for a
22.5x6x2 nm cantilever (LxWxH). This
corresponds to a "free-end" design with a 17,17 SWCNT. It is assumed that the available
electrostatic energy is only 10% of the maximum (i.e. each carboxylic acid
group has a charge of approximately 0.32 e).
As shown, the system is capable of deflecting the SWCNT beyond its point
of buckling.

Figure
19: Performance chart of a cantilever valve,
showing the partial energy contributions and the total energy of a system for a
45x9x2 nm cantilever (LxWxH). This
corresponds to an "in-line" design with a 17,17 SWCNT. It is assumed that the available
electrostatic energy is only 10% of the maximum (i.e. each carboxylic acid group
has a charge of approximately 0.32 e).
As shown, the system is capable of crimping the SWCNT to the point that
interrupts the flow through it. Note
that the curvature of the cantilever of an "in-line" valve will always be
limited by the surface against which the SWCNT is crimped. As shown in figure 12, there is a
disproportionate increase in the strain energy of the system if it the internal
opening of the SWCNT is reduced beyond the "closed" position, in this case 1.81
Angstroms. This is because the motion of the cantilever beyond this point
starts causing significant deformation of the surface below the SWCNT.
Discussion
The coupling of molecular simulations and engineering
principles as described here has the following advantages:
Areas of future research:
As mentioned above, there are several fundamental questions
which need to be answered in order to obtain accurate ab initio predictions of
the behavior of molecular devices that utilize functionalized cantilevers to
generate motion. We also point out that
there are other ways of generating motion in this device for which the current
analysis is still valid.
Areas that need immediate attention to fully characterize
these devices include:
Conclusions:
We have presented the design and static characterization of
a chemically feasible nanomechanical fluid control valve, 32.5 to 55 nm in
length, that utilizes a functionalized silicon cantilever to generate
motion. The device can be controlled through
variations in the pH of the surrounding environment. We have also illustrated the steps and advantages of an
engineering design procedure that combines molecular mechanics with classical
engineering in the design of nanomechanical systems, thus overcoming the major
limitations of both. Finally, we have
identified the key fundamental areas of future research in the development of
nanosystems where motion is generated through the deflection of cantilever
beams.
Table 1: Force field
energy expression [17,18]
|
Total Energy |
E = E bond
stretch + E angle bend + E torsion + E inversion + E van
der Waals + E electrostatic |
|
Bond Stretch Energy (Universal) |
|
|
Angle Bend Energy (Universal) |
|
|
Torsion Energy (Dreiding) |
|
|
Inversion Energy (Dreiding) |
|
|
Van der Waals Energy (Universal) |
|
|
Electrostatic Energy (Classical)* |
|
|
*Energies in kcal/mol, charges in electronic units and
distances in Angstroms |
|
Table 2: Force
field atom types
|
H_ |
Hydrogen |
|
H___A |
Acid Hydrogen |
|
C_3 |
Tetrahedral carbon (sp3) |
|
C_R |
Resonant carbon |
|
C_2 |
Planar carbon (non-resonant sp2) |
|
O_3 |
Tetrahedral oxygen |
|
O_R |
Resonant oxygen |
|
O_2 |
Planar oxygen (non-resonant sp2) |
|
Si3 |
Tetrahedral silicon |
Table 3: Force
field bond stretch parameters
Atom 1
|
Atom 2 |
Kr |
Ro |
|
C_3 |
H_ |
662.9963 |
0.7080 |
|
C_3 |
C_3 |
699.5920 |
1.5140 |
|
C_R |
H_ |
715.3873 |
1.0814 |
|
C_R |
C_3 |
739.8881 |
1.4860 |
|
C_R |
C_R |
925.3104 |
1.3793 |
|
C_2 |
H_ |
709.4702 |
1.0844 |
|
C_2 |
C_3 |
735.4249 |
1.4890 |
|
O_3 |
H_ |
1120.7078 |
0.9903 |
|
O_3 |
C_3 |
1078.4241 |
1.3938 |
|
O_R |
H_ |
1049.6934 |
1.0121 |
|
O_R |
C_2 |
1085.0881 |
1.391 |
|
O_2 |
C_2 |
1610.4076 |
1.2195 |
|
O_2 |
C_R |
1153.3079 |
1.3630 |
|
O_3 |
H___A |
500.0000 |
1.0000 |
|
Si3 |
H_ |
345.6964 |
1.4930 |
|
Si3 |
C_3 |
453.3563 |
1.8669 |
|
Si3 |
Si3 |
321.4845 |
2.3650 |
Table 4: Force
field angle bend parameters
Atom 1
|
Atom 2 |
Atom 3 |
|
|
|
H_ |
C_3 |
H_ |
75.2779 |
109.4710 |
|
C_3 |
C_3 |
H_ |
117.2321 |
109.4710 |
|
C_3 |
C_3 |
C_3 |
214.2065 |
109.4710 |
|
C_2 |
C_3 |
H_ |
121.1966 |
109.4710 |
|
C_2 |
C_3 |
C_3 |
219.5725 |
109.4710 |
|
O_3 |
C_3 |
H_ |
160.9632 |
109.4710 |
|
O_3 |
C_3 |
C_3 |
284.0680 |
109.4710 |
|
Si3 |
C_3 |
H_ |
89.6088 |
109.4710 |
|
Si3 |
C_3 |
C_3 |
181.9182 |
109.4710 |
|
C_R |
C_R |
H_ |
103.1658 |
120.0000 |
|
C_R |
C_R |
C_R |
188.4421 |
120.0000 |
|
C_R |
C_3 |
H_ |
121.6821 |
109.4710 |
|
C_R |
C_3 |
C_3 |
220.2246 |
109.4710 |
|
C_3 |
C_2 |
H_ |
98.7841 |
120.0000 |
|
C_3 |
C_R |
O_2 |
242.4495 |
120.0000 |
|
O_R |
C_2 |
C_3 |
229.9906 |
120.0000 |
|
O_2 |
C_2 |
H_ |
139.6784 |
120.0000 |
|
O_2 |
C_2 |
C_3 |
240.9266 |
120.0000 |
|
O_2 |
C_2 |
O_R |
315.2170 |
120.0000 |
|
O_2 |
C_R |
O_2 |
333.7212 |
120.0000 |
|
C_3 |
O_3 |
H_ |
165.6001 |
104.5100 |
|
H_ |
O_3 |
H_ |
113.0577 |
104.5100 |
|
C_2 |
O_R |
H_ |
142.0707 |
110.3000 |
|
H_ |
Si3 |
H_ |
32.4318 |
109.4710 |
|
C_3 |
Si3 |
H_ |
57.6239 |
109.4710 |
|
Si3 |
Si3 |
H_ |
48.9079 |
109.4710 |
|
Si3 |
Si3 |
C_3 |
102.7429 |
109.4710 |
|
Si3 |
Si3 |
Si3 |
98.4346 |
109.4710 |
|
H___A |
O_3 |
H___A |
120.0000 |
109.4710 |
Table 5: Force
field torsion parameters
Atom 1
|
Atom 2
(center1) |
Atom 3
(center 2) |
Atom 4 |
V |
n |
d |
|
Any |
C_3 |
C_3 |
Any |
2.0000 |
3 |
1 |
|
Any |
C_R |
C_R |
Any |
25.0000 |
2 |
-1 |
|
Any |
C_2 |
C_3 |
Any |
2.0000 |
3 |
1 |
|
Any |
O_3 |
C_3 |
Any |
2.0000 |
3 |
1 |
|
Any |
O_R |
C_2 |
Any |
25.0000 |
2 |
-1 |
|
Any |
Si3 |
C_3 |
Any |
2.0000 |
3 |
1 |
|
Any |
Si3 |
Si3 |
Any |
2.0000 |
3 |
1 |
|
Any |
C_R |
C_3 |
Any |
2.0000 |
3 |
1 |
Table 6: Force
field inversion parameters
|
Atom 1
(center) |
Atom 2 |
Atom 3 |
Atom 4 |
|
|
|
C_R |
Any |
Any |
Any |
6.0000 |
0.0000 |
|
C_2 |
O_2 |
Any |
Any |
50.0000 |
0.0000 |
Table 7: Force
field diagonal van der Waals parameters and combination rules
Atom
|
Ro |
Do |
|
H_ |
2.8859 |
0.043999 |
|
H___A |
0.8999 |
0.009999 |
|
C_3 |
3.8510 |
0.104999 |
|
C_R |
3.8510 |
0.104999 |
|
C_2 |
3.8510 |
0.104999 |
|
O_3 |
3.5000 |
0.059999 |
|
O_R |
3.5000 |
0.059999 |
|
O_2 |
3.5000 |
0.059999 |
|
Si3 |
4.2950 |
0.402000 |
|
Spline
function (3rd degree polynomial):
cut-on 11.0000 A Cut-off 14.0000 A |
||
|
Combination
rule for parameters of different atoms: |
||
References: